Low-power, low-pressure reactive-ion etching process for silicon etching with vertical and smooth walls for mechanobiology application

Reactive Ion Etching of Dielectrics and Silicon for Photovoltaic Applications

Reactive Ion Etching of Dielectrics and Silicon for Photovoltaic Applications Prakash N. K. Deenapanray1*,y, C. S. Athukorala, Daniel Macdonald, W. E. Jellett, E. Franklin, V. E. Everett, K. J. Weber and A. W. Blakers Centre for Sustainable Energy Systems, FEIT, The Australian National University, Canberra ACT 0200, Australia Department of Engineering, FEIT, The Australian National University, ...

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Cryogenic Deep Reactive Ion Etching of Silicon Micro and Nanostructures

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK

Deep Reactive Ion Etching (DRIE)

Selective reactive ion etching of silicon nitride over silicon using CHF3 with N2 addition

In this article the effects of process parameters of CHF31N2 plasma etching chemistry ~rf power 50–70 W, pressure 22.5–52.5 mTorr, and N2 content 0%–95%! and mask materials ~photoresist, aluminum, and silicon nitride! on the etching selectivity of silicon nitride over polysilicon are investigated. It was found that the selectivity increased with the N2 content in the range of 0%–85% and then de...